any changing of specification will not be informed individual BCP157 pnp silicon medium power transistor r o h s c o m p l i a n t p r o d u c t http://www.secosgmbh.com elektronische bauelemente features z z z z $ e v r o x w h p d [ l p x p u d w l q j v 7 d & collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation junction temperature storage temperature ? 1 single pulse, pw=10ms ? 2 when mounted on a 40 40 0.7 mm ceramic board. parameter v cbo v ceo v ebo p c tj tstg -8 0 v v v a(dc) c c -60 -5 -3 i c a(pulse) -6 ? 1 ? 2 0.5 2w w 150 ? 55 ~ + 150 symbol limits unit z z z z ( o h f w u l f d o f k d u d f w h u l v w l f v 7 d & collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage 2 v ce(sat)2 base-emitter saturation voltage sat collector-emitter saturation voltage 1 output capacitance current gain - bandwidth product parameter symbol bv cbo bv ceo bv ebo i cbo i ebo v be(sat) v ce(sat)1 v be(on) cob min. -80 -60 -5 ? ? -0.9 - ? ? ? ? ? ? ? ? -150 -0.8 - ? ? ? 0.1 0.1 -1.25 -300 -1.0 v v ce =-2v, i c =-1a 30 v i c = - 100 a, i e =0 i c = - 10ma, i b =0 i e = - 100 a, i c =0 v cb = - 60v, i e =0 v eb = - 4v, i c =0 i c =-1a, i b =-100ma i c = - 1a,i b =- 100ma v ce = - 5v, i c =-100ma, f=100mhz v cb = - 10v, i e =0a, f=1mhz v v a a v mv mhz pf typ. max. unit conditions 1 . - 6 0 v o l t v c e o 2 . 3 a m p c o n t i n u o u s c u r r e n t 3 . l o w s a t u r a t i o n v o l t a g e s o t - 8 9 1 . b a s e 2 . c o l l e c t o r 3 . e m i t t e r f t symbol a b b1 c d d1 e e1 e e1 l min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 2.900 0.900 max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 3.100 1.100 min 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 0.114 0.035 max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.122 0.043 dimensions in millimeters dimensions in inches 0.060typ 1.500typ d d1 c a b b1 e1 e l e e1 01 -jun-2002 rev. a page 1 of 2 base-emitter saturation voltage on switching time current gain h fe 4 h fe 1 h fe 2 h fe 3 70 200 300 v ce =-2v, i c =-1 a 200 170 150 100 80 40 v ce =-2v, i c =-2a v ce =-2v, i c =-50ma v ce =-2v, i c =- 1 a v ce =-2v, i c =-500ma v cc =-10v, i c =-500ma, i b 1=i b 2=-50ma note: measured under pulse condition. pulse width<300us, duty cycle<2% t off t on - - - - 40 450 ns 100 1 40 - -450 -600 mv i c =-3a,i b =-3 00ma spice parameter data is available upon urquest for this device. www..net
any changing of specification will not be informed individual BCP157 pnp silicon medium power transistor http://www.secosgmbh.com elektronische bauelemente 01-jun-2002 rev. a page 2 of 2 electrical characteristics curves
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